Long Wavelength (1.3 µm and 1.5 µm) Photoluminescence from InGaAs/GaPAsSb Quantum Wells Grown on GaAs

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Date Created
1999
Agent

Long Wavelength Pseudomorphic InGaPAsSb Type-I and Type-II Active Layers Grown on GaAs

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Date Created
2000
Agent

Real-Time Composition Control of InAlAs Grown on InP Using Spectroscopic Ellipsometry

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Date Created
2000
Agent

Strained InGaAs/GaPAsSb Heterostructures Grown on GaAs (001) for Optoelectronic Applications in the 1100 nm – 1550 nm Range

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Date Created
2000
Agent

Changes in Luminescence Emission Induced by Proton Irradiation: InGaAs/GaAs Quantum Wells and Quantum Dots

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Date Created
2000
Agent

GaAs-Substrate-Based Long-Wave Active Materials With Type-II Band Alignments

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Date Created
2001
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Dislocation-Induced Spatial Ordering of InAs Quantum Dots: Effects on Optical Properties

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Date Created
2002
Agent

Defect States in Red-Emitting InxAl1-xAs Quantum Dots

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Date Created
2002
Agent