Fully Integrated THz Receivers in Silicon for Imaging and Spectroscopy

In this dissertation, enhanced coherent detection of terahertz (THz) radiation is presented for Silicon integrated circuits (ICs). In general THz receivers implemented in silicon technologies face a challenge due to the high noise figure (NF) of the low noise amplifier (LNA) and low conversion gain of the radio frequency (RF) mixers. Moreover, issues with implementing local oscillators (LOs) further compound these challenges, including power driving mixes, distribution networks, and overall power consumption, particularly for large-scale arrays. To address these inherent obstacles, two notable cases of enhancing THz receiver performance are presented. In the Sideband Separation Receiver (SSR) for space-borne applications is introduced. Implemented in SiGe BiCMOS technology this broadband SSR boasts a high Image Rejection Ratio (IRR) exceeding 20 dB across 220 – 320 GHz. Employing a modified Weaver architecture, optimized for simultaneous spectral line observation, it utilizes an I/Q double down-conversion, pushing the technological boundaries of silicon and enabling large-scale focal plane array (FPA) deployment in space. Notably, the use of a sub-harmonic down-conversion mixer (SHM) significantly reduces LO power generation challenges, enhancing scalability while maintaining minimal NF. In the 4x4 FPA active THz imager, a dual-polarized patch antenna operating at 420 GHz utilizes orthogonal polarization for RF and LO signals, coupled with a coherent homodyne power detector. Realized in 0.13µm SiGe HBT technology, the power detector is co-designing with the antenna to ensure minimal crosstalk and achieving -30dB cross-polarization isolation. Illumination of the LO enhances power detector performance without on-chip routing complexities, enabling scalability to 1K pixel THz imagers. Each pixel achieves a Noise-Equivalent Power (NEP) of 1 pW/√Hz at 420 GHz, and integration with a readout and digital filter ensures high dynamic range. Furthermore, this study explores radiation hardening techniques to mitigate single-event effects (SEEs) in high-frequency receivers operating in space. Leveraging a W-band receiver in 90 nm SiGe BiCMOS technology, matching considerations and diverse modes of operation are employed to reduce SEE susceptibility. Transient current pulse modeling, validated through TCAD simulations, demonstrates the effectiveness of proposed techniques in substantially mitigating SETs within the proposed radiation-hardened-by-design (RHBD) receiver front-end.