Description
Wide Bandgap (WBG) semiconductor materials are shaping day-to-day technologyby introducing powerful and more energy responsible devices. These materials have
opened the door for building basic semiconductor devices which are superior in terms of
handling high voltages, high currents, power, and temperature which is not possible using
conventional silicon technology. As the research continues in the field of WBG based
devices, there is a potential chance that the power electronics industry can save billions of
dollars deploying energy-efficient circuits in high power conversion electronics. Diamond,
silicon carbide and gallium nitride are the top three contenders among which diamond can
significantly outmatch others in a variety of properties. However, diamond technology is
still in its early phase of development and there are challenges involved in many aspects of
processing a successful integrated circuit. The work done in this research addresses three
major aspects of problems related to diamond technology. In the first part, the applicability
of compact modeling and Technology Computer-Aided Design (TCAD) modeling
technique for diamond Schottky p-i-n diodes has been demonstrated. The compact model
accurately predicts AC, DC and nonlinear behavior of the diode required for fast circuit
simulation. Secondly, achieving low resistance ohmic contact onto n-type diamond is one
of the major issues that is still an open research problem as it determines the performance
of high-power RF circuits and switching losses in power converters circuits. So, another
portion of this thesis demonstrates the achievement of very low resistance ohmic contact
(~ 10-4 Ω⋅cm2) onto n-type diamond using nano crystalline carbon interface layer. Using
the developed TCAD and compact models for low resistance contacts, circuit level
predictions show improvements in RF performance. Lastly, an initial study of breakdown
characteristics of diamond and cubic boron nitride heterostructure is presented. This study
serves as a first step for making future transistors using diamond and cubic boron nitride –
a very less explored material system in literature yet promising for extreme circuit
applications involving high power and temperature.
Download count: 1
Details
Title
- Diamond: An Ultra-Wide Band Gap Semiconductor for High Power Applications
Contributors
- JHA, VISHAL (Author)
- Thornton, Trevor (Thesis advisor)
- Goodnick, Stephen (Committee member)
- Nemanich, Robert (Committee member)
- Alford, Terry (Committee member)
- Hoque, Mazhar (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2023
Subjects
Resource Type
Collections this item is in
Note
- Partial requirement for: Ph.D., Arizona State University, 2023
- Field of study: Electrical Engineering