Growth Modes of Silver-doped Chalcogenide-based Programmable Metallization Cells for Timing Applications

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Description
This research aims to investigate the material properties of various silver-doped germanium-chalcogenide thin films that novel lateral Programmable Metallization Cell (PMC) devices are based on. These devices are governed by a solid-state electrochemical reaction that is controlled electrically occurring at

This research aims to investigate the material properties of various silver-doped germanium-chalcogenide thin films that novel lateral Programmable Metallization Cell (PMC) devices are based on. These devices are governed by a solid-state electrochemical reaction that is controlled electrically occurring at the micro and nanoscale.By using various electrical and optical characterization techniques, useful material characteristics such as the activation energy of electrodeposit growth rate and bandgap energy can be extracted. These parameters allow for better tuning of these materials for more specific PMC device applications, such as a timer that can be placed into integrated circuits for metering and anticounterfeiting purposes. The compositions of focus are silver-doped germanium-selenide and germanium-sulfide variations; overall, the bandgap energy of these materials decreases as silver content is increased, the activation energy tends to be smaller in sulfide-based devices, and chalcogenides highly doped with silver exhibit nanocluster migration growth modes due to the agglomeration of silver clusters in the film.