Description
In this project, current-voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements are used to (a) characterize the electrical properties of Nb/p-type Si Schottky barriers, (b) identify the concentration and physical character of the electrically active defects present in the depletion region, and (c) use thermal processing to reduce the concentration or eliminate the defects. Barrier height determinations using temperature-dependent I-V measurements indicate that the barrier height decreases from 0.50 eV to 0.48 eV for anneals above 200 C. The electrically-active defect concentration measured using DLTS (deep level transient spectroscopy) drops markedly after anneals at 250 C.
A significant increase in leakage currents is almost always observed in near-ideal devices upon annealing. In contrast, non-ideal devices dominated by leakage currents annealed at 150 C to 250 C exhibit a significant decrease in such currents.
A significant increase in leakage currents is almost always observed in near-ideal devices upon annealing. In contrast, non-ideal devices dominated by leakage currents annealed at 150 C to 250 C exhibit a significant decrease in such currents.
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Title
- Characterization of electrically active defects at Nb/Si interface using current transport and transient capacitance measurements
Contributors
- Krishna Murthy, Madhu (Author)
- Newman, Nathan (Thesis advisor)
- Goryll, Michael (Committee member)
- Alford, Terry (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2018
Subjects
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Note
- thesisPartial requirement for: M.S., Arizona State University, 2018
- bibliographyIncludes bibliographical references (pages 39-40)
- Field of study: Materials science and engineering
Citation and reuse
Statement of Responsibility
by Madhu Krishna Murthy