Description
MESFETs are used in high frequency applications and are typically made from GaAs. Dr. Trevor Thornton designed a silicon-on-insulator MESFET \u2014 a cheaper alternative with competitive capabilities. This paper concerns the characterization and modeling of this device to exhibit its marketability as a CMOS integrated transistor. Overviews of the MESFET's history and DLTS (deep level transient spectroscopy) are offered.
Copyright Statement
Details
Title
- Characterization of Silicon MESFETs for Mixed Signal and RF Electronics
Contributors
- Terrell, Catherine Elaine (Author)
- Thornton, Trevor (Thesis director)
- Young, Alexander (Committee member)
- Barrett, The Honors College (Contributor)
- Electrical Engineering Program (Contributor)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2014-05
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