Description
This work presents a spectroscopic study of the thermally enhanced photoinduced electron emission from nitrogen-doped diamond films prepared on p-type silicon substrates. It has been shown that photon-enhanced thermionic emission (PETE) can substantially enhance thermionic emission intensity from a p-type semiconductor. An n-type diamond/p-type silicon structure was illuminated with 400–450 nm light, and the spectra of the emitted electrons showed a work function less than 2 eV and nearly an order of magnitude increase in emission intensity as the temperature was increased from ambient to ∼400 °C. Thermionic emission was negligible in this temperature range. The results are modeled in terms of contributions from PETE and direct photoelectron emission, and the large increase is consistent with a PETE component. The results indicate possible application in combined solar/thermal energy conversion devices.
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Details
Title
- Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates
Contributors
Agent
- Sun, Tianyin (Author)
- Koeck, Franz (Author)
- Rezikyan, Aram (Author)
- Treacy, Michael (Author)
- Nemanich, Robert (Author)
- College of Liberal Arts and Sciences (Contributor)
- Department of Physics (Contributor)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2014-09-15
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Identifier
- Digital object identifier: 10.1103/PhysRevB.90.121302
- Identifier TypeInternational standard serial numberIdentifier Value2469-9969
- Identifier TypeInternational standard serial numberIdentifier Value2469-9950
Note
- Copyright 2014 by the American Physical Society. View the article as published at http://dx.doi.org/10.1103/PhysRevB.90.121302
Citation and reuse
Cite this item
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Sun, Tianyin, Koeck, Franz A. M., Rezikyan, Aram, Treacy, Michael M. J., & Nemanich, Robert J. (2014). Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates. PHYSICAL REVIEW B, 90(12), 121302. http://dx.doi.org/10.1103/PhysRevB.90.121302