We study the low efficiency droop characteristics of semipolar InGaN light-emitting diodes (LEDs) using modified rate equation incoporating the phase-space filling (PSF) effect where the results on c-plane LEDs are also obtained and compared. Internal quantum efficiency (IQE) of LEDs was simulated using a modified ABC model with different PSF filling (n[subscript 0]), Shockley-Read-Hall (A), radiative (B), Auger (C) coefficients and different active layer thickness (d), where the PSF effect showed a strong impact on the simulated LED efficiency results. A weaker PSF effect was found for low-droop semipolar LEDs possibly due to small quantum confined Stark effect, short carrier lifetime, and small average carrier density. A very good agreement between experimental data and the theoretical modeling was obtained for low-droop semipolar LEDs with weak PSF effect. These results suggest the low droop performance may be explained by different mechanisms for semipolar LEDs.
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- Analysis of Low Efficiency Droop of Semipolar InGaN Quantum Well Light-Emitting Diodes by Modified Rate Equation With Weak Phase-Space Filling Effect
- Fu, Houqiang (Author)
- Lu, Zhijian (Author)
- Zhao, Yuji (Author)
- Ira A. Fulton Schools of Engineering (Contributor)
- Digital object identifier: 10.1063/1.4954296
- Identifier TypeInternational standard serial numberIdentifier Value2158-3226
- The final version of this article, as published in AIP Advances, can be viewed online at: http://aip.scitation.org/doi/10.1063/1.4954296, opens in a new window
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Fu, H., Lu, Z., & Zhao, Y. (2016). Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect. AIP Advances, 6(6), 065013. doi:10.1063/1.4954296