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Radiation hardening of electronic devices is generally necessary when designing for the space environment. Non-volatile memory technologies are of particular concern when designing for the mitigation of radiation effects. Among other radiation effects, single-event upsets can create bit flips in

Radiation hardening of electronic devices is generally necessary when designing for the space environment. Non-volatile memory technologies are of particular concern when designing for the mitigation of radiation effects. Among other radiation effects, single-event upsets can create bit flips in non-volatile memories, leading to data corruption. In this paper, a Verilog implementation of a Reed-Solomon error-correcting code is considered for its ability to mitigate the effects of single-event upsets on non-volatile memories. This implementation is compared with the simpler procedure of using triple modular redundancy.

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Title
  • Verilog Reed-Solomon Code for Radiation Hardening of Non-Volatile Memory
Contributors
Date Created
2021-05
Resource Type
  • Text
  • Machine-readable links