RF Characterization of Diamond Schottky PIN Diodes

The intrinsic material properties of diamond are attractive for use in high power limiter/receiver protector (RP) systems, especially the ones required at the input of radio transceivers. The RP device presents a low capacitance and high resistance to low input signals, thereby adding negligible insertion loss to these desired signals. However, at high input radio frequency (RF) power levels, the RP turns on with a resistance much smaller than the 50 Ω characteristic impedance, reflecting most of the potentially damaging input power away from the receiver input. P-type-intrinsic-n-type (PIN) diodes made of Silicon and Gallium Arsenide used in today’s conventional RP systems have certain limitations at high-power. The wide bandgap of diamond combined with its higher thermal conductivity give it a superior RF power handling capability that can protect sensitive RF front-end components from high power incident signals.

Vertical diamond PIN diodes were proposed and fabricated with an n+-i-p++ structure consisting of: a very thin and heavily phosphorus-doped n-type diamond layer and an intrinsic diamond layer grown on a heavily boron-doped diamond substrate with a (111) crystallographic orientation. Direct current (DC) and RF small-signal characterization was carried out by attaching the diamond sample in a shunted coplanar waveguide (CPW) configuration.

The small-signal lumped element model of the diode impedance under forward-bias was validated with a fit to the measured data, and provides a roadmap for the optimization of parameters for the implementation of diamond Schottky PIN diodes to be successfully used in receiver protector/limiter applications at S-band. The experimental results with the device growth and fabrication show promise and can help in further elevating the device RF figure of merit, in turn enabling the path for commercialization of these diamond-based devices.