Full metadata
Title
Elimination of potential-induced degradation for crystalline silicon solar cells
Description
Potential-Induced Degradation (PID) is an extremely serious photovoltaic (PV) durability issue significantly observed in crystalline silicon PV modules due to its rapid power degradation, particularly when compared to other PV degradation modes. The focus of this dissertation is to understand PID mechanisms and to develop PID-free cells and modules. PID-affected modules have been claimed to be fully recovered by high temperature and reverse potential treatments. However, the results obtained in this work indicate that the near-full recovery of efficiency can be achieved only at high irradiance conditions, but the full recovery of efficiency at low irradiance levels, of shunt resistance, and of quantum efficiency (QE) at short wavelengths could not be achieved. The QE loss observed at short wavelengths was modeled by changing the front surface recombination velocity. The QE scaling error due to a measurement on a PID shunted cell was addressed by developing a very low input impedance accessory applicable to an existing QE system. The impacts of silicon nitride (SiNx) anti-reflection coating (ARC) refractive index (RI) and emitter sheet resistance on PID are presented. Low RI ARC cells (1.87) were observed to be PID-susceptible whereas high RI ARC cells (2.05) were determined to be PID-resistant using a method employing high dose corona charging followed by time-resolved measurement of surface voltage. It has been demonstrated that the PID could be prevented by deploying an emitter having a low sheet resistance (~ 60 /sq) even if a PID-susceptible ARC is used in a cell. Secondary ion mass spectroscopy (SIMS) results suggest that a high phosphorous emitter layer hinders sodium transport, which is responsible for the PID. Cells can be screened for PID susceptibility by illuminated lock-in thermography (ILIT) during the cell fabrication process, and the sample structure for this can advantageously be simplified as long as the sample has the SiNx ARC and an aluminum back surface field. Finally, this dissertation presents a prospective method for eliminating or minimizing the PID issue either in the factory during manufacturing or in the field after system installation. The method uses commercially available, thin, and flexible Corning® Willow® Glass sheets or strips on the PV module glass superstrates, disrupting the current leakage path from the cells to the grounded frame.
Date Created
2016
Contributors
- Oh, Jaewon (Author)
- Bowden, Stuart (Thesis advisor)
- Tamizhmani, Govindasamy (Thesis advisor)
- Honsberg, Christiana (Committee member)
- Hacke, Peter (Committee member)
- Schroder, Dieter (Committee member)
- Arizona State University (Publisher)
Topical Subject
Resource Type
Extent
xxi, 145 pages : illustrations (some color), color maps
Language
eng
Copyright Statement
In Copyright
Primary Member of
Peer-reviewed
No
Open Access
No
Handle
https://hdl.handle.net/2286/R.I.40361
Statement of Responsibility
by Jaewon Oh
Description Source
Viewed on December 12, 2016
Level of coding
full
Note
thesis
Partial requirement for: Ph.D., Arizona State University, 2016
bibliography
Includes bibliographical references (pages 134-145)
Field of study: Electrical engineering
System Created
- 2016-10-12 02:23:25
System Modified
- 2021-08-30 01:20:59
- 3 years 2 months ago
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